The NE52118 is a low noise amplifier with a typical noise figure of 1.0 dB, a typical gain of 15.0 dB and a typical gain-bandwidth product of 15.0 dB. It is housed in a 4-pin super mini-mold package and has a grounded emitter.
This document is a preliminary data sheet for the NEC NE52118, a GaAs Heterojunction Bipolar Transistor (HBT) designed as a low noise amplifier. It is intended for use in low noise and high gain amplifier applications operating in the LtoS band.
| Noise Figure | 1.0 dB TYP. |
|---|---|
| Gain | 15.0 dB TYP. |
| Output Power Intercept Point | 15 dBm TYP. |
| Package Type | 4-pin super minimold |
| Collector to Emitter Voltage | 5.0 V |
| Collector Current | 7 mA |
| Total Power Dissipation | 30 mW |
| Junction Temperature | +125 °C |
The typical noise figure is 1.0 dB.
The typical gain is 15.0 dB.
The maximum collector current rating is 7 mA.