This datasheet mainly introduces the parameter information of Motorola Bipolar Power Transistor products, including maximum collector-emitter voltage, maximum collector-base voltage, maximum emitter-base voltage, maximum collector current, etc.
This document provides device data for the Motorola TIP140/D series of 10 Ampere Darlington complementary silicon power transistors. These devices are designed for general-purpose amplifier and low-frequency switching applications, featuring monolithic construction with built-in base-emitter shunt resistors.
The datasheet details maximum ratings, electrical characteristics including DC current gain and saturation voltages, thermal resistance values, and typical performance curves such as collector-emitter saturation voltage versus junction temperature.
| Collector-Emitter Sustaining Voltage (TIP140) | 60 Vdc |
|---|---|
| Collector-Emitter Sustaining Voltage (TIP142) | 100 Vdc |
| Total Device Dissipation | 125 Watts |
| Operating Junction Temperature Range | -65 to +150 °C |
| Thermal Resistance (Junction to Case) | 1.0 C/W |
The device is designed for general-purpose amplifier and low frequency switching applications.
The maximum continuous collector current for the TIP140 is 10 Adc.
The operating and storage junction temperature range is –65 to +150.