Cypress Semiconductor CY62146CV30 Static RAM Datasheet

The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telephones.


Cypress Semiconductor CY62146CV30 Static RAM Datasheet - cover page
Brand
Cypress
Category
Memory
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
286 KB
Published
11 June, 2012
Updated
30 September, 2023
MD5 checksum
9B1DBB223ACE83A87B1A90D949374677

About this manual

The document describes the CY62146CV30, a high-performance CMOS static RAM organized as 256K words by 16 bits. It is designed for portable applications such as cellular telephones due to its More Battery Life (MoBL) features, including ultra-low active current and automatic power-down capabilities.

What's inside

  • Features
  • Functional Description
  • Pin Configuration
  • Maximum Ratings
  • Electrical Characteristics
  • Data Retention Characteristics
  • Switching Characteristics
  • Package Diagrams

Specifications

Organization256K words x 16 bits
Voltage Range2.7V to 3.3V
Typical Active Current (55ns)1.5 mA @ f = 1 MHz
Typical Active Current (70ns)7 mA @ f = fmax
Operating Temperature Range-40°C to +85°C
Package Type48-ball FBGA

Frequently asked questions

What is the voltage range for the CY62146CV30?

The device operates with a supply voltage between 2.7V and 3.3V.

How much power does the chip use during standby mode?

Power consumption is reduced by 99% when the device is deselected.

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