TZM5221B and TZM5267B are silicon Z diodes produced by Vishay Telefunken. They feature very sharp reverse characteristics, very high stability, electrical data identical to the devices 1N5221B and 1N5267B, low reverse current level and ±5% VZ tolerance. Their applications include voltage stabilization.
The document is a technical specification sheet for the Vishay TZM5221B...TZM5267B series of Silicon Z-Diodes. It highlights features such as very sharp reverse characteristics, high stability, and electrical data identical to the 1N5221B...1N5267B devices. The diodes are designed for voltage stabilization applications.
| Junction temperature | 175 °C |
|---|---|
| Storage temperature range | -65 to +175 °C |
| Maximum Thermal Resistance (PC board) | 500 K/W |
| Forward voltage (Iz=200mA) | 1.1 V |
The maximum power dissipation is 500 mW when the ambient temperature is 25°C.
The maximum junction temperature is 175 °C.
The reverse voltage tolerance varies by + 5%.