Vishay Siliconix Si7909DN Dual P-Channel MOSFET Datasheet

Vishay Siliconix Si7909DN is a dual P-channel 12-V (D-S) MOSFET with 1.8-V rating, new low thermal resistance PowerPAK® package, advanced high cell density process, ultra-low rDS(on), and high PD capability. It is suitable for load switch, PA switch, battery switch, and bi-directional switch.


Vishay Siliconix Si7909DN Dual P-Channel MOSFET Datasheet - cover page
Brand
Vishay
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
182 KB
Published
07 June, 2012
Updated
01 October, 2023
MD5 checksum
A0F2D3BA95EC0E1E2FE147302DAAB09E

About this manual

The document is a product summary and datasheet for the Vishay Siliconix Si7909DN, which features two P-Channel MOSFETs in a single PowerPAK 1212-8 leadless package. The device is designed with TrenchFET technology to offer low on-resistance and high power capability.

What's inside

  • PRODUCT SUMMARY FEATURES
  • APPLICATIONS
  • ORDERING INFORMATION
  • ABSOLUTE MAXIMUM RATINGS
  • THERMAL RESISTANCE RATINGS
  • SPECIFICATIONS
  • TYPICAL CHARACTERISTICS

Specifications

Drain-Source Voltage-12 V
Pulsed Drain Current-20 A
Operating Junction Temperature Range-55 to 150 °C

Frequently asked questions

What are the operating junction and storage temperature limits for this component?

The device operates within a junction and storage temperature range of -55 to 150 °C.

What is the maximum power dissipation rating for this MOSFET?

The maximum power dissipation is rated at 7 W under specified conditions.

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