This document is a technical datasheet for the ROHM 2SB1065, an epitaxial planar PNP silicon transistor designed for low frequency power amplification. It features a wide area collector highly resistant to breakdown and serves as a complementary pair with the 2SD1506.
The document provides detailed specifications including absolute maximum ratings such as a collector-emitter voltage of -60V and a continuous collector current of -3A. Electrical characteristics cover parameters like saturation voltage, transition frequency (fT), and capacitance under specific test conditions.
| Continuous Collector Current (Ic) | -3 A |
|---|---|
| Collector Dissipation Power (Po) | 10 W |
| Transition Frequency (fT) | 70 MHz |
The typical collector saturation voltage is -0.5V when the collector current is -2A and the base current is -0.2A.