This document provides information about the application, external dimensions, voltage regulation, features, and structure of the PTZ16B diode.
This document is a technical datasheet for the ROHM PTZ16B Zener diode. It describes the device as a small power mold type (PMDS) with high ESD tolerance, constructed using silicon epitaxial planar technology.
The datasheet provides absolute maximum ratings and detailed electrical characteristics for various models in the PTZ series, including the PTZ16B. Key specifications include a Zener voltage of 16.2V to 18.3V (typical), with operating resistance and reverse current values specified at Ta=25°C.
| Power dissipation | 1000 mW |
|---|---|
| Junction temperature | 150 C |
| Storage temperature | -55 to +150 C |
| Zener voltage (Typical) | 16.2V |
The document states that this device is used for voltage regulation.
The diode has a maximum power dissipation of 1000 mW and a maximum junction temperature of 150 C.
The typical Zener voltage (Vz) for this part is 16.860 V.