This document describes the features and characteristics of the NPN Epitaxial Planar Silicon Composite Transistor Switching Applications product from SANYO Electric Co.,Ltd., including the use of a composite type with two chips, excellent thermal equilibrium, and pair capability.
This document is a datasheet for the Sanyo FC112, an NPN epitaxial planar silicon composite transistor intended for switching applications. The device features on-chip bias resistors and contains two chips equivalent to the 2SC3396 within a single CP package, offering improved mounting efficiency and excellent thermal equilibrium.
| Collector-to-Base Voltage | 50 V |
|---|---|
| Collector-to-Emitter Voltage | 50 V |
| Collector Current | 100 mA |
| Input Resistance | 15 to 29 kΩ |
The maximum junction temperature is 150°C.
The maximum collector current is 100 mA.