This document is a technical datasheet for the NEC 2SJ325 and 2SJ325-Z, which are P-channel MOS Field Effect Transistors intended for industrial use. These devices are specifically designed as drivers for solenoids, motors, and lamps.
The datasheet provides comprehensive electrical characteristics, including on-state resistance, cutoff voltage, capacitance values, and switching times. It also details absolute maximum ratings such as drain-to-source voltage and total power dissipation, along with typical performance graphs and package dimensions.
| On-state Resistance (Typ) | 83 mΩ |
|---|---|
| Drain Current (DC) | 4.0 A |
| Total Power Dissipation (Ta = 25°C) | 1.0 W |
| Channel Temperature | 150 °C |
They are designed for solenoid, motor and lamp driver applications.
Yes, the device includes a built-in G-S Gate Protection Diode.