This document describes the features and characteristics of the Si4862DY N-Channel 16V MOSFET product from Vishay Siliconix. It has a rated voltage of 2.5V, low rDS(on) of 3.3mΩ, low gate resistance, and is 100% RG tested. The product is suitable for synchronous rectification and low output voltage synchronous rectification applications.
The document describes the Vishay Siliconix Si4862DY as an N-Channel 16-V (D-S) MOSFET utilizing TrenchFET technology. Key features include low on-resistance, low gate resistance, and suitability for synchronous rectification applications.
The datasheet details absolute maximum ratings such as a drain-source voltage of 16V and operating junction temperatures from -55°C to 150°C. It also lists specific electrical specifications including gate threshold voltage, on-state resistance, and dynamic parameters like total gate charge and switching times.
| Drain-Source Voltage (Vps) | 16 V |
|---|---|
| Operating Junction Temperature Range | -55 to 150 °C |
| Total Gate Charge (Qg) | 70 nC |
The maximum power dissipation is 22 W when the ambient temperature reaches 70°C.
The device operates within a junction and storage temperature range of -55 to 150 °C.