Vishay Siliconix Si1901DL P-Channel MOSFET Datasheet

Si1901DL is a new product from Vishay Siliconix. It is a P-channel 20-V (D-S) MOSFET. Its main features include: rated drain-source voltage of -20 V, drain-source resistance of 3.8 @ VGS = -4.5 V, and continuous drain current of -180 A.


Vishay Siliconix Si1901DL P-Channel MOSFET Datasheet - cover page
Brand
Vishay
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
45 KB
Published
07 June, 2012
Updated
01 October, 2023
MD5 checksum
AD09C023DD3494D455A9E9FA884A7301

About this manual

The document describes the Vishay Siliconix Si1901DL as a new product. It is identified as a P-Channel MOSFET with a drain-source voltage rating of 20V and continuous drain current capabilities up to 180mA at 25°C. The device is available in SOT-363 and SC-70 (6-Leads) packages.

What's inside

  • Product Summary
  • Absolute Maximum Ratings
  • Thermal Resistance Ratings
  • Specifications
  • Typical Characteristics

Specifications

Package TypeSOT-363, SC-70 (6-Leads)

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at a temperature of 70°C?

The device supports a continuous drain current of -140 mA when the ambient temperature is 70°C.

What are the operating junction and storage temperature limits for this component?

The MOSFET operates within a junction and storage temperature range of -55 to 150 °C.

What is the maximum power dissipation rating at an ambient temperature of 25°C?

The maximum power dissipation is rated at 0.20 W when the ambient temperature is 25°C.

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