This document describes the features and characteristics of the 1N5711 and 1N6263 Schottky diodes, including their general purpose applications, low forward voltage drop, fast switching, and protection of MOS devices. It also provides mechanical data, maximum ratings, thermal characteristics, and electrical characteristics such as reverse breakdown voltage, leakage current, forward voltage drop, junction capacitance, and reverse recovery time.
This document is a technical datasheet for the General Semiconductor 1N5711 and 1N6263 Schottky diodes. These metal-on-silicon devices are designed for general-purpose applications such as protection of MOS devices, steering, biasing, and coupling in fast switching and low logic level circuits.
The datasheet provides detailed mechanical data for the DO-204AH (DO-35 Glass) case, including dimensions and packaging options. It also lists maximum ratings and thermal characteristics at 25°C ambient temperature.
| Case Type | DO-204AH (DO-35 Glass) |
|---|---|
| Weight | approx. 0.13g |
| Power Dissipation (Infinite Heatsink) | 400 mW |
| Maximum Single Cycle Surge Current | 2.0 A |
| Thermal Resistance Junction to Ambient Air | 0.30 °C/mW |
| Junction Temperature | 125°C |
| Storage Temperature Range | -55 to +150°C |
| Reverse Breakdown Voltage (1N6263) | 60 V |
They are metal-on-silicon Schottky barrier devices protected by a PN junction guard ring, ideal for protection and fast switching.
Yes, it is available with type designation LL5711 and LL6263.
Options include D7/10K per 13 reel (62mm tape) and D8/10K per Ammo tape (52mm tape), with 20K boxes.