BC 546-BC 549 are general purpose NPN silicon epitaxial planar transistors with 500 mW power dissipation, plastic TO-92 case, weight approx. 0.18 g.
This document provides technical specifications for the BC 546 through BC 549 series of NPN Si-Epitaxial Planar transistors. It covers maximum ratings such as collector-emitter voltage and power dissipation, along with standard pinning information for the TO-92 plastic case.
The datasheet details electrical characteristics including DC current gain groups (A, B, C), small signal parameters, saturation voltages, cutoff currents, capacitance values, noise figures, and thermal resistance. It also lists recommended complementary PNP transistors. This manual is written in German.
| Power dissipation | 500 mW |
|---|---|
| Collector-Emitter-voltage B open (VCE0) | 65 V / 45 V / 30 V |
| Collector current (DC) | 100 mA |
| Peak Collector current | 200 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (TS) | -65…+150 °C |
| Gain-Bandwidth Product (fT) | 300 MHz |
| Thermal resistance junction to ambient (RthA) | 250 K/W |
Pin 1 is Collector (C), Pin 2 is Base (B), and Pin 3 is Emitter (E).
The document recommends using BC 556, BC 557, and BC 558 for groups A, B, and C respectively.
The maximum total power dissipation (Ptot) is 500 mW, provided leads are kept at ambient temperature.