This document introduces the features and characteristics of AT49BV008A(T) and AT49BV8192A(T), including 2.7V to 3.6V read/write operation, fast read access time, internal erase/program control, sector architecture, fast sector erase time, byte/word programming, hardware data protection, DATA polling for end of program detection, and low power dissipation
The document details the specifications of the AT49BV008A(T) and AT49BV8192A(T), which are 3-volt, 8-megabit Flash Memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. These devices feature fast read access times of 120 ns and offer internal erase/program control with sector architecture.
| Supply Voltage Range | 2.7V to 3.6V |
|---|---|
| Read Access Time | 120 ns |
| Active Current | 25 mA |
| Standby Current | 50 pA |
| Write Cycles | 10,000 Write Cycles |
| Erase Time | 10 seconds |
The device operates with voltages between 2.7V and 3.6V for both reading and writing.
A fast sector erase takes approximately 10 seconds to complete.
The memory supports a typical endurance of 10,000 write cycles.