AT49BV512 is a 3-volt-only, 512K Flash memories organized as 65,536 words of 8 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When the devices are deselected, the CMOS standby current is less than 50 µµµµA. To allow for simple in-system reprogrammability, the AT49BV512 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis.
The document describes the Atmel AT49BV512, a 3-volt-only 512K Flash memory organized as 65,536 words of 8 bits each. Manufactured with advanced nonvolatile CMOS technology, it offers access times to 120 ns and power dissipation of just 90 mW over the commercial temperature range.
Key features include a single supply voltage range of 2.7V to 3.6V for both read and write operations, fast erase cycle time of 10 seconds, and byte-by-byte programming with typical times of 30 microseconds. The device includes an optional 8K bytes boot block with a reprogramming write lockout feature to provide data integrity for secure code.
| Memory Capacity | 512K (64K x 8) |
|---|---|
| Supply Voltage Range | 2.7V to 3.6V |
| Read Access Time | 120 ns |
| Erase Cycle Time | 10 seconds |
| Active Current | 25 mA |
| Standby Current (CMOS) | 50 pA |
| Write Cycles | 10,000 Write Cycles |
The commercial temperature range is -40°C to +85°C.
The optional boot block section is 8K bytes.
The typical byte programming time is a fast 30 microseconds.