Atmel AT29C1024 1 Megabit Flash Memory Datasheet

AT29C1024 is a 5-volt-only in-system Flash programmable and erasable read-only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 330 mW. When the device is deselected, the CMOS standby current is less than 200 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.


Atmel AT29C1024 1 Megabit Flash Memory Datasheet - cover page
Brand
Atmel
Category
Memory
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
708 KB
Published
07 June, 2012
Updated
29 September, 2023
MD5 checksum
68AC11F875F9E02D69AED4D9AD7A06E6

About this manual

The document describes the Atmel AT29C1024, a 1 megabit CMOS Flash PEROM organized as 65,536 words by 16 bits. It features fast read access times down to 70 ns and supports 5-volt-only reprogramming with sector-based programming operations.

The datasheet details device operation including read, data load, program, and chip erase modes. It also covers hardware and software data protection features, absolute maximum ratings, DC and AC operating ranges for various temperature grades (Commercial and Industrial), and pin configurations.

What's inside

  • Features
  • Description
  • Pin Configurations
  • Device Operation
  • Software Data Protection
  • Hardware Data Protection
  • Absolute Maximum Ratings
  • DC Characteristics
  • AC Read Characteristics

Specifications

Memory Capacity1 Megabit (64K x 16)
Access Time70 ns to 150 ns
Supply Voltage5V +10%
Active Current60 mA
Standby Current (CMOS)< 200 uA
Endurance> 10,000 Cycles
Program Cycle Time10 ms

Frequently asked questions

What is the organization of the AT29C1024 memory?

The device has 1 megabit of memory organized as 65,536 words by 16 bits.

Can the AT29C1024 be programmed with voltages other than 5V?

No, it requires a single 5V supply and does not require high input voltages for programming.

How is data protection implemented in this memory?

It features both software control via a specific command sequence and hardware inhibition based on voltage levels and signal states.

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