Cxk58512tm/m is a high speed cmos static ram produced by sony. it is organized as 65536 words by 8 bits. a polysilicon tft cell technology realized extremely low stand-by current and higher data retention stability. this product has the characteristics of low power consumption and high speed, and is suitable for portable equipment with battery back up.
This document describes the Sony CXK58512TM/M, a 64k x 8-bit high-speed CMOS static RAM. It utilizes polysilicon TFT cell technology to achieve extremely low stand-by current and higher data retention stability. The device is suitable for portable equipment with battery backup due to its low power consumption characteristics.
| Organization | 65536-word x 8-bit |
|---|---|
| Access Time (-55LL) | 55ns (Max.) |
| Access Time (-70LL) | 70ns (Max.) |
| Access Time (-10LL) | 100ns (Max.) |
| Supply Voltage | +5V +/- 10% |
| Operating Temperature | 0 to +70 °C |
| Package Types | 32 pin TSOP, 32 pin SOP |
The maximum standby current is 10uA.
Yes, it is suitable for portable equipment with battery backup due to low power consumption and data retention stability.