Sony CXK77B3610GB High Speed Bi-CMOS Synchronous SRAM Datasheet

The CXK77B3610GB-6/7 is a high-speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high-speed SRAM, and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.


Sony CXK77B3610GB High Speed Bi-CMOS Synchronous SRAM Datasheet - cover page
Brand
SONY
Category
Memory
Document type
Datasheet
Language
English
Pages
16
File format
PDF
File size
168 KB
Published
07 June, 2012
Updated
28 September, 2023
MD5 checksum
085C8BA119AFAD98868F13316D174E78

About this manual

The document details the Sony CXK77B3610GB-6/7, a 1M-bit Bi-CMOS synchronous static RAM featuring input registers and a write buffer on a single IC. It is available in two speeds: 6ns (166MHz) and 7ns (142MHz), operating with a single 3.3V power supply.

What's inside

  • Description
  • Features
  • Pin Configuration
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Timing Waveforms

Specifications

Capacity1M bit (32768 words x 36 bits)
Package119 pin BGA (Plastic)
Operating Frequency (Model -6)166MHz
Operating Frequency (Model -7)142MHz
Supply Voltage3.3V + 0.15V

Frequently asked questions

What are the available synchronous operation modes?

The device supports three modes: Register-Register mode (R-R), Register-Flow Thru mode (R-F), and Register-Latch mode (R-L).

Is the CXK77B3610GB compatible with LVTTL/LVCMOS?

Yes, its inputs and outputs are LVTTL/LVCMOS compatible.

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