CXG1030N is a power amplifier from Sony. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. It features output power of 21 dBm, positive power supply of 3.0 V, low current consumption of 170 mA, and high power gain of 39 dB Typ.
The document provides technical specifications and electrical characteristics for the Sony CXG1030N, an integrated circuit designed as a power amplifier for Personal Handy-phone System (PHS) applications. It utilizes Sony's GaAs J-FET process and operates from a single positive power supply of 3.0V.
| Output power | 21 dBm |
|---|---|
| Positive power supply | 3.0V |
| Current consumption | 170 mA |
| Power gain (Typ.) | 39 dB |
| Package type | 16-pin SSOP |
| Structure | GaAs J-FET MMIC |
| Operating temperature | -35 to +85 °C |
The device operates between -35°C and +85°C.
The amplifier provides an output power of 21 dBm.
The absolute maximum supply voltage is 6 V.