Update: 30 September, 2023
M29F160BT and M29F160BB are two single-supply flash memories that can be programmed, erased, and read at a 5V ±10% voltage. They have a 55ns access time, an 8µs per byte/word programming time, 35 memory blocks (1 boot block (top or bottom location) and 2 parameters and 32 main blocks), an embedded byte/word program algorithm, an embedded multi-block/chip erase algorithm, status register polling and toggle bits, a ready/busy output pin, erase suspend and resume modes, reading and programming another block during erase suspend, unlock bypass program command, faster production/batch programming, temporary block unprotection mode, standby and automatic standby, 100,000 block program/erase cycles, 20 years data retention (defectivity below 1 ppm/year), and an electronic signature (manufacturer code: 0020h, top device code M29F160BT: 22CCh, bottom device code M29F160BB: 224Bh).
File format: PDF
Size: -
MD5 Checksum: 55A88558B148E86125B73B7AD8059B24
Publication date: 05 June, 2012
Downloads: -
PDF Link: ST M29F160BT M29F160BB handbook PDF