Si6447DQ is a P-channel MOSFET produced by Vishay Siliconix. Its maximum drain-source voltage is 20V, its maximum gate-source voltage is -20V, and its rated current is 3.2A.
The document details the Si6447DQ, a P-Channel MOSFET manufactured by Vishay Siliconix. Key electrical parameters include a drain-source voltage rating of -20 V and a maximum continuous drain current of 3.2 A at a junction temperature of 150°C.
| Drain-Source Voltage (VDS) | -20 V |
|---|---|
| Continuous Drain Current (TJ = 150°C) | 3.2 A |
| Maximum Power Dissipation (TA = 25°C) | 1.5 W |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
The operating range is from –55 to 150°C.