The BZT03C is a silicon Z-diode and transient voltage suppressor with glass passivated junction and hermetically sealed package from Vishay Telefunken. It features glass passivated junction, hermetically sealed package and clamping time in picoseconds. The application of this diode is medium power voltage regulators and medium power transient suppression circuits.
This document is a technical datasheet for the BZT03C series of Silicon Z-Diodes and Transient Voltage Suppressors manufactured by Vishay Telefunken. The device features a glass passivated junction in a hermetically sealed package (SOD-57), designed for medium power voltage regulators and transient suppression circuits.
The datasheet provides absolute maximum ratings, including power dissipation up to 3.25 W at Tj=25°C, and storage temperature ranges from -65°C to +175°C. It lists detailed electrical characteristics such as forward voltage (VF) and Zener voltage (VZ) for various models ranging from 6V2 to 180V, along with clamping voltages at specific stand-off currents.
| Power dissipation (Tj=25°C, l=10mm) | 3.25 W |
|---|---|
| Repetitive peak reverse power dissipation | 10 W |
| Junction temperature maximum | 175°C |
| Storage temperature range | -65...+175°C |
| Package type | Sintered Glass Case SOD 57 |
They are used in medium power voltage regulators and medium power transient suppression circuits.
The maximum junction temperature (Tj) is 175°C.