This is a Si4834DY dual N-Channel 30-V (D-S) MOSFET with Schottky Diode component produced by Vishay Siliconix
The document describes the Si4834DY, which integrates an N-Channel MOSFET and a Schottky diode in a single package. It is designed for applications requiring low on-resistance and fast switching capabilities.
Key specifications include a maximum drain-source voltage of 30V, a continuous drain current up to 75A, and a typical on-state resistance ranging from 0.022 to 0.030 ohms depending on test conditions.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Operating Junction Temperature Range | -55 to 150 °C |
| Maximum Power Dissipation | 13 W |
The device has a maximum drain-source voltage of 30 V.
The component operates from -55 to 150 °C for both junction and storage temperatures.
The maximum continuous drain current is 75 A when the case temperature is 25°C.