IRF7821 HEXFET is a power mosfet produced by irf company. Its features are low on-resistance, low gate charge, and fully characterized avalanche voltage and current.
This document provides a comprehensive technical overview of the IRF7821 HEXFET Power MOSFET. It lists absolute maximum ratings such as a 30V drain-to-source voltage and operating temperatures from -55 to +155°C. Key electrical parameters include typical on-resistance values, gate charge specifications, and avalanche characteristics essential for circuit design.
| Drain-to-Source Voltage (Vds) | 30 V |
|---|---|
| Continuous Drain Current @ Ta = 25°C | 13.6 A |
| Operating Junction Temperature Range | -55 to + 155 °C |
| Static Drain-to-Source On-Resistance (Typ) | 7.0 mΩ @ Vgs = 10V |
| Total Gate Charge (Typ) | 93 nC |
The device can operate with a junction temperature ranging from -55 to +155 °C.
The typical static drain-to-source on-resistance is 7.0 mΩ when Vgs is 10V.