IRF1405ZS-7PPbF/IRF1405ZL-7PPbF is an automotive MOSFET with extremely low on-resistance and high current. Its main features include advanced process technology, ultra low on-resistance, 175°C maximum junction temperature, fast switching speed and improved repetitive avalanche rating.
This document provides technical data for the International Rectifier IRF1405ZS-7PPbF and IRF1405ZL-7PPbF Automotive MOSFETs. These HEXFET Power MOSFETs feature advanced process technology with ultra-low on-resistance, a 175°C operating temperature, and fast switching speeds suitable for automotive use.
The datasheet lists absolute maximum ratings, static characteristics, diode parameters, and thermal resistance values. It includes detailed graphs illustrating output characteristics, transfer characteristics, capacitance vs. voltage, safe operating areas, and avalanche performance curves.
| Continuous Drain Current (Package Limited) | 120 A |
|---|---|
| Operating Junction Temperature | -55 to +175 °C |
| Static Drain-to-Source On-Resistance (Typ) | 3.7 mΩ |
| Gate Threshold Voltage (Max) | 4.0 V |
| Maximum Power Dissipation | 230 W |
The device supports an operating junction temperature up to 175°C.
The maximum current rating is 120 A under these conditions.
The resistance measures 4.9 mΩ.