The MGF0919A GaAs FET is an N-channel Schottky Gate GaAs FET designed for use UHF band amplifiers. It features high output power, high power gain and high power added efficiency.
The Mitsubishi Electric MGF0919A is an N-channel Schottky Gate Gallium Arsenide Field Effect Transistor (GaAs FET) designed for use in UHF band amplifiers. Key features include high output power of 30dBm typical at 1.9GHz, a power gain of 19dB, and a hermetic package suitable for SMD non-matched applications.
| Output Power (Po) | 30dBm (Typ.) @f=1.9GHz, Pin=12dBm |
|---|---|
| Power Gain (Gp) | 19dB (Typ.) @f=1.9GHz |
| Power Added Efficiency (nadd) | 37% (Typ.) @f=1.9GHz, Pin=12dBm |
| Drain Current (ID) | 800 mA |
| Total Power Dissipation (PT) | 6 W |
| Channel Temperature | 175 °C |
The recommended bias condition specifies a Vds of 10V.
The typical noise figure (NF) is 1.2 dB under specified test conditions.
This GaAs FET is designed for use in L & S Band amplifiers, specifically tested at 1.9GHz.