Cypress Semiconductor CY7C1041BV33 Static RAM Datasheet

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits, manufactured by Cypress Semiconductor Corporation. It features high speed, low active power, low CMOS standby power, 2.0V Data Retention, automatic power-down when deselected, TTL-compatible inputs and outputs, and easy memory expansion with CE and OE features.


Cypress Semiconductor CY7C1041BV33 Static RAM Datasheet - cover page
Brand
Cypress
Category
Memory
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
188 KB
Published
05 June, 2012
Updated
30 September, 2023
MD5 checksum
36B089D6EB41F9DADB6EC87DFCE71A64

About this manual

The document describes the CY7C1041BV33 as a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Key features include high speed with access times starting at 12 ns and low power consumption options for both commercial and industrial applications.

What's inside

  • Functional Description
  • Pin Configuration
  • Maximum Ratings
  • Electrical Characteristics
  • Switching Characteristics
  • Data Retention Characteristics
  • Truth Table

Specifications

Organization262,144 words by 16 bits
Maximum Access Time (-12)12 ns
Max Active Power (Commercial)612 mW
Max Standby Power (Commercial L)1.8 mW
Data Retention Voltage2.0V

Frequently asked questions

What is the maximum access time for the -12 speed grade?

The maximum address-to-data valid time (tAA) is 12 ns.

How does writing data to the device work?

Writing requires taking Chip Enable (CE) and Write Enable (WE) inputs LOW.

What happens when the device is deselected?

The input/output pins are placed in a high-impedance state.

Download PDF (188 KB)

More Cypress Manuals


View all Cypress manuals →