This document is a technical datasheet for the Mitsubishi Electric 2SC1970, an NPN epitaxial planar type silicon RF power transistor. It is specifically designed for use in output power amplifiers and drivers within VHF band mobile radio applications.
The datasheet provides detailed specifications including absolute maximum ratings, electrical characteristics such as DC forward current gain and collector efficiency, and typical performance data graphs. Key features include high power gain (Gpe > 9.2dB at 175MHz) and a TO-220 package for convenient mounting.
| Transistor Type | Silicon NPN epitaxial planar type |
|---|---|
| Package Type | TO-220 |
| Collector Dissipation (Ta=25°C) | 1 W |
| Junction Temperature (Max) | 150 °C |
| DC Forward Current Gain (Min/Typ/Max) | 18 / 50 / 180 |
| Output Power (Typ) | 1 W |
It is designed for RF power amplifiers on VHF band mobile radio applications.
The output power is specified at Vcc = 13.5V, Pin=0.12W, and f=175MHz.
The maximum collector to emitter breakdown voltage (Vceo) is 17 V.