2SD2528 is a high forward current transfer ratio NPN epitaxial planar type transistor, with high forward current transfer ratio hFE, full-pack package which can be installed to the heat sink with one screw
The 2SD2528 is a silicon NPN epitaxial planar power transistor intended for standard applications such as office equipment, communications gear, measuring instruments and household appliances. It offers a high forward current transfer ratio and satisfactory linearity, and can be mounted to a heat sink with a single screw.
Key electrical ratings include a collector‑to‑base voltage of 80 V, collector‑to‑emitter voltage of 60 V, peak collector current of 10 A, and a maximum power dissipation of 40 W. The device operates up to a junction temperature of 150 °C and is stored between –55 °C and +150 °C.
| Collector to base voltage (Vcb) | 80 V |
|---|---|
| Collector to emitter voltage (Vce) | 60 V |
| Emitter to base voltage (Veb) | 6 V |
| Peak collector current (Ic max) | 10 A |
| Collector current (Ic) | 5 A |
| Base current (Ib) | 1 A |
| Junction temperature (Tj) | 150 °C |
The maximum collector‑to‑emitter voltage is 60 V.
The device can handle a peak collector current of 10 A.