Si4133 is a monolithic integrated circuit that performs both IF and dual-band RF synthesis for wireless communications applications. The Si4133 includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power-down settings are programmable through a three-wire serial interface. Features include dual-band RF synthesizers, IF synthesizer, integrated VCOs, loop filters, varactors, and resonators, minimal external components required, low phase noise, programmable power down modes, 1µA standby current, 18mA typical supply current, 2.7V to 3.6V operation, and 24-pin TSSOP and 28-lead MLP packages.
The Si4133 family is a monolithic dual‑band RF synthesizer designed for wireless communications such as digital cordless phones, GSM, and WLAN. It integrates VCOs, loop filters, reference and VCO dividers, and phase detectors, and is programmable via a three‑wire serial interface.
Key specifications include supply voltages from 2.7 V to 3.6 V, ambient temperature operation from –40 °C to 85 °C, and RF1/RF2 VCO center‑frequency ranges of 947‑1720 MHz and 789‑1429 MHz respectively. The device offers low phase‑noise performance (‑132 dBc/Hz for RF1 at 1 MHz offset) and supports power‑down modes with standby currents as low as 1 µA.
| Ambient Temperature | -40 °C to 85 °C |
|---|---|
| Supply Voltage (Vop) | 2.7 V to 3.6 V |
| Total Supply Current (RF1 & IF) | 18 mA to 27 mA |
| RF1 VCO Center Frequency Range | 947 MHz to 1720 MHz |
| RF2 VCO Center Frequency Range | 789 MHz to 1429 MHz |
| IF VCO Center Frequency Range | 526 MHz to 952 MHz |
| RF1 Phase Noise (1 MHz offset) | -132 dBc/Hz |
| RF2 Phase Noise (1 MHz offset) | -134 dBc/Hz |
| IF Phase Noise (100 kHz offset) | -117 dBc/Hz |
The Si4133 operates from 2.7 V to 3.6 V supply voltage.
It can operate from –40 °C up to 85 °C.
RF1 exhibits –132 dBc/Hz phase noise at a 1 MHz offset.