The MCM69R736A/818A is a 4 megabit synchronous late write fast static RAM designed for high performance in secondary cache, ATM switch, Telecom, and other high-speed memory applications. It is fabricated in Motorola's high-performance silicon gate BiCMOS technology and features HSTL inputs and outputs, adjustable input trip-point, output voltage, synchronous write, and byte enable.
The MCM69R736A and MCM69R818A are 4‑megabit synchronous late‑write static RAMs intended for high‑performance cache, ATM switches, telecom and other high‑speed memory applications. They feature HSTL I/O, differential clock inputs, programmable output impedance, byte‑write control, and JTAG boundary‑scan capability.
Both devices are offered in a 119‑bump PBGA package (14 mm × 22 mm) with core supply voltages of 3.15‑3.6 V, output driver supplies of 1.4‑1.6 V, and support operating temperatures from 0 °C to +70 °C. Electrical ratings include up to 50 mA input current and 70 mA output current per I/O pin.
| Memory size | 4 Mbit |
|---|---|
| Organization (MCM69R736A) | 128 K words × 36 bits |
| Organization (MCM69R818A) | 256 K words × 18 bits |
| Access time (MCM69R736A/818A‑5) | 5 ns |
| Access time (MCM69R736A/818A‑8) | 8 ns |
| Package type | 119‑bump PBGA (14 mm × 22 mm) |
| Core supply voltage (Vppb) | 3.15 V – 3.6 V |
| Output driver supply voltage (Vpbpa) | 1.4 V – 1.6 V |
| Maximum input current per I/O | 50 mA |
| Maximum output current per I/O | 70 mA |
| Operating temperature range | 0 °C – +70 °C |
Both parts are supplied in a 119‑bump PBGA package measuring 14 mm × 22 mm.
The core supply (Vppb) must be between 3.15 V and 3.6 V, and the output driver supply (Vpbpa) between 1.4 V and 1.6 V.
Each I/O pin can handle up to 50 mA of input current and 70 mA of output current.