This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.5 Watts output power and 43% minimum power added efficiency under GSM signal conditions at 3.6 Volt supply voltage. To achieve this superior performance, Motorola's planar GaAs MESFET process is employed. The device is packaged in the PFP-16 Power Flat Pack package which gives excellent thermal performance through a solderable backside contact.
The MRFIC0917 is a 900 MHz GaAs integrated power amplifier intended for GSM Class IV handsets. It delivers up to 34.5 dBm output power at a 3.6 V supply with a minimum 43 % power‑added efficiency. The device is supplied in a PFP‑16 Power Flat Pack package and includes a low‑parasitic, high‑thermal‑dissipation design.
The datasheet details recommended operating ranges, electrical characteristics, pin assignments, scattering parameters, and application guidelines. It also provides mechanical drawing dimensions and notes on biasing, matching networks, and the use of the MC33169 support IC for power control.
| Usable Frequency Range | 800 to 1000 MHz |
|---|---|
| Typical Output Power | 34.5 dBm @ 3.6 V |
| Power Added Efficiency (minimum) | 43 % |
| Supply Voltage (Normal) | 6 V |
| Ambient Operating Temperature | -40 °C to +85 °C |
| Package Type | PFP‑16 Power Flat Pack |
| Device Marking | M0917 |
The device operates from 800 MHz to 1000 MHz.
Typical output power is 34.5 dBm when supplied with 3.6 V.
The minimum power‑added efficiency is 43 %.
It is supplied in a PFP‑16 Power Flat Pack package.