TM2SN64EPH and TM4SN64EPH are two synchronous dynamic random access memory (SDRAM) modules that can be used in 66MHz 4-Clock systems. They use a single 3.3V power supply and support read latencies 2 and 3. Both modules support byte read/write capability and have a high performance range, high speed, low noise, low voltage TTL (LVTTL) interface, support burst interleave and burst interrupt operations, burst length programmable to 1, 2, 4 and 8, have two banks for on-chip interleaving (gapless access), an ambient temperature range of 0°C to 70°C, gold-plated contacts, a pipeline architecture and use EEPROM for serial presence detection (SPD).
The TM2SN64EPH and TM4SN64EPH are 168‑pin dual‑in‑line memory modules (DIMMs) designed for 66‑MHz 4‑clock systems. TM2SN64EPH contains eight 16‑Mbit SDRAMs (2 M × 8 bit) while TM4SN64EPH uses sixteen such SDRAMs, giving capacities of 2,097,152 × 64 bits and 4,194,304 × 64 bits respectively.
Key specifications include a single 3.3‑V supply (±10 % tolerance), operating temperature range of 0 °C to 70 °C, CAS latencies of 2 and 3, programmable burst lengths of 1, 2, 4, or 8, and detailed pin‑out information for all 168 pins. Electrical characteristics such as input capacitance, output voltage levels, and timing parameters are also provided.
| Capacity (TM2SN64EPH) | 2,097,152 × 64 bits |
|---|---|
| Capacity (TM4SN64EPH) | 4,194,304 × 64 bits |
| Supply voltage (Vpp) | 3.0 V to 3.6 V |
| Operating temperature range | 0 °C to 70 °C |
| CAS latency | 2 and 3 |
| Burst length | Programmable to 1, 2, 4, or 8 |
| Package type | JEDEC 168‑Pin Dual‑In‑Line Memory Module (DIMM) |
| High‑level output voltage (Voh) | 2.4 V |
| Low‑level output voltage (Vol) | 0.4 V |
The modules operate from 3.0 V to 3.6 V supply voltage.
They are rated for an ambient temperature range of 0 °C to 70 °C.
The TM2SN64EPH uses eight 16‑Mbit SDRAM chips.
Both CAS latency 2 and CAS latency 3 are supported.