The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic, fully‑autoprotected power MOSFETs designed for DC to 50 kHz applications. They integrate overvoltage clamp, linear current limiting, over‑temperature and short‑circuit protection, and provide status feedback through the input pin.
Key features include a 42 V drain‑source voltage rating, 28 A continuous drain current, built‑in ESD protection, and thermal shutdown at 150 °C with automatic restart below 135 °C. The devices are offered in PowerSO‑10 and D2PAK (PowerSO‑10) packages.
| Drain‑Source Voltage (VDS) | 42 V |
|---|---|
| Continuous Drain Current (ID) | 28 A |
| Operating Junction Temperature (Tj) | up to 125 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| Thermal Resistance Junction‑Case (RθJC) | 3.75 °C/W (PowerSO‑10) |
The integrated overvoltage clamp is set at 42 V.
Over‑temperature shutdown occurs at a minimum of 150 °C.
They are offered in PowerSO‑10 (TO‑263) and D2PAK (PowerSO‑10) packages.