This document provides preliminary information on a new product under development or evaluation. The product, M28W640ECT and M28W640ECB, is a 64 Mbit 3V supply flash memory with features such as wide supply voltage range, fast access time, short programming time, and security capabilities.
The M28W640ECT and M28W640ECB are 64‑Mbit (4 Mbit × 16) flash memory parts offered in TSOP48 and TFBGA48 packages. They support block‑level erase, word‑by‑word programming, and feature an instant block‑locking scheme with up to 100,000 program/erase cycles.
Key features include multiple supply voltage options (Vpp 2.7‑3.6 V, optional 12 V fast‑program, Vppa 1.65‑3.6 V), 128‑bit OTP security cells, a 192‑bit protection register, and JEDEC‑compatible command interface.
| Memory Size | 64 Mbit (4 Mbit × 16) |
|---|---|
| Supply Voltage (Vppa) | 1.65 V to 3.6 V |
| Access Time | 70 ns – 100 ns |
| Programming Time (typical) | ~10 µs |
| Program/Erase Endurance | 100,000 cycles per block |
| Security Features | 128‑bit OTP cells, 64‑bit unique device ID |
| Package Types | TSOP48 (12 × 20 mm) and TFBGA48 (6.39 × 10.5 mm, 0.75 mm pitch) |
Each block can be programmed and erased up to 100,000 times.
The device includes 128‑bit one‑time‑programmable OTP cells and a 64‑bit unique device identifier.
They are available in TSOP48 (12 × 20 mm) and TFBGA48 (6.39 × 10.5 mm, 0.75 mm pitch) packages.