The M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY is a non-volatile memory from Toshiba Corporation. It features a 5V ±10% supply voltage, 12V programming voltage, 70ns fast access time, 10µs typical byte programming time, 1s range low power consumption, and 10,000 erase/program cycles.
The M28F101 is a 1 Mb (128 K × 8) flash memory device offering electrical chip‑erase and byte‑program capabilities. It is designed for high‑speed microprocessor systems with a 70 ns access time and low standby current.
The datasheet provides detailed pin assignments, absolute maximum ratings, electrical characteristics, and command sequences for read, write, erase and verify operations, as well as package dimensions for PDIP, TSOP and PLCC variants.
| Memory capacity | 1 Mb (128 K × 8) |
|---|---|
| Programming voltage | 12 V |
| Access time | 70 ns |
| Stand‑by current | 100 µA max |
| Erase/Program cycles | 10 000 cycles |
| Ambient operating temperature | ‑40 °C to 125 °C |
The M28F101 provides 1 Mb of flash memory organized as 128 K × 8 bits.
The device is rated for up to 10 000 erase/program cycles.
The flash memory has a fast access time of 70 ns.