This handbook describes the SANYO 2SA1016 (PNP) and 2SC2362 (NPN) high‑voltage low‑noise epitaxial planar silicon transistors. It lists the order numbers, typical applications, absolute maximum ratings, and detailed electrical characteristics.
Key data include collector‑to‑base and collector‑to‑emitter voltage limits, current ratings, power dissipation, and package dimensions. The document also contains a disclaimer limiting liability for certain high‑risk uses.
| Collector to Base Voltage (Vcb) | 120‑150 V |
|---|---|
| Collector to Emitter Voltage (Vceo) | 100‑120 V |
| Emitter to Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 50 mA |
| Power Dissipation (Pd) | 400 mW |
| Junction Temperature (Tj) | 125 °C |
The maximum collector‑to‑base voltage is 120 V to 150 V.
The transistors can handle up to 50 mA of collector current.
The rated power dissipation is 400 mW.
The maximum junction temperature is 125 °C.