The SANYO 2SJ254 is a P‑Channel MOSFET designed for very high‑speed switching applications with low on‑resistance and low‑voltage drive capability. It is supplied in a TO‑220ML package suitable for surface mounting.
Key specifications include a 30 V drain‑to‑source rating, 15 V gate‑to‑source rating, 20 W power dissipation, and typical on‑state resistance of about 120 mΩ. Electrical characteristics such as input and output capacitances are also listed for design reference.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Gate to Source Voltage (VGS) | 15 V |
| Power Dissipation (Pp) | 20 W |
| Input Capacitance (Ciss) | 1000 pF |
| Output Capacitance (Coss) | 600 pF |
The device can handle up to 30 V between drain and source.
The gate‑to‑source voltage rating is 15 V.
It is packaged in a TO‑220ML case.
The MOSFET can operate up to a case temperature of 150 °C and be stored from –55 °C to +150 °C.