This document describes the specifications of SANYO products and states that these products are not suitable for applications that require extremely high levels of reliability, such as life-support systems and aircraft control systems. It also provides details about the 2SK3120 model, an N-Channel Silicon MOSFET for ultrahigh-speed switching applications.
The 2SK3120 is an N‑channel silicon MOSFET designed for ultrahigh‑speed switching applications. It features low on‑resistance and fast transition times, making it suitable for high‑frequency circuits.
The document lists absolute maximum ratings, electrical characteristics, capacitance values, and switching timing parameters, along with safety and export‑control notices. It serves as a reference for designers needing detailed performance data and handling guidelines.
| Drain-to-Source Voltage (VDS) | 30 V |
|---|---|
| Gate-to-Source Voltage (VGS) | +20 V |
| Drain Current (DC) | 2 A |
| Drain Current (Pulse) | 8 A |
| Input Capacitance (Ciss) | 90 pF |
| Output Capacitance (Coss) | 50 pF |
| Reverse Transfer Capacitance (Crss) | 22 pF |
| Total Gate Charge (Qg) | 5 nC |
| Diode Forward Voltage (Vsp) | 1.0 V |
| Storage Temperature Range | -55 °C to +150 °C |
The 2SK3120 can withstand a drain‑to‑source voltage of up to 30 V.
The gate‑to‑source voltage must not exceed +20 V.
The device can be stored from –55 °C up to +150 °C.