NEC 2SK1109 Datasheet

2SK1109 is a N-channel silicon junction field effect transistor for ECM converter from NEC


NEC 2SK1109 Datasheet - cover page
Brand
NEC
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
45 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
D2F48807DC5F0AA57DC1F285A36C15D1

About this manual

The NEC 2SK1109 is an N‑channel silicon junction field‑effect transistor intended for use in impedance converters of ECM. The datasheet provides a compact overview of its features, ordering information, and absolute maximum ratings.

Key sections cover electrical characteristics such as forward transfer admittance, input capacitance, and noise voltage, as well as typical performance curves, derating factors, and package dimensions. The document also includes legal notices and guidance on ESD handling.

What's inside

  • Description
  • Features
  • Ordering Information
  • Absolute Maximum Ratings
  • Package Drawing
  • Electrical Characteristics
  • Typical Characteristics
  • Derating Factor
  • Equivalent Circuit
  • Noise Voltage Test Circuit

Specifications

Forward Transfer Admittance (typ)1000 nS
Storage Temperature (Tstg)-55 °C to +125 °C
PackageSC‑59 (MM)

Frequently asked questions

What is the typical forward transfer admittance of the 2SK1109?

The typical forward transfer admittance is 1000 nS.

What is the storage temperature range for the device?

The device can be stored from –55 °C up to +125 °C.

What package type does the 2SK1109 use?

It is supplied in an SC‑59 (MM) surface‑mount package.

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