The DTD543EE / DTD543EM from ROHM are low VCE (sat) digital transistors with built-in resistors. They have lower VCE (sat) and built-in bias resistors, allowing the configuration of an inverter circuit without connecting external input resistors. The bias resistors consist of thin-film resistors with complete isolation, enabling negative biasing of the input and almost completely eliminating parasitic effects. Only the on/off conditions need to be set for operation, making device design easy.
The DTD543EE and DTD543EM are low VCE(sat) NPN digital transistors that include built‑in thin‑film bias resistors, allowing inverter circuits without external resistors. Their design reduces parasitic effects and simplifies on/off operation.
The devices are supplied in an EMT3 package with pins GND, IN and OUT. Absolute maximum ratings include a collector current of 500 mA, power dissipation of 150 mW, junction temperature up to 150 °C and storage temperature from –55 °C to +150 °C. Electrical characteristics feature a transition frequency of 260 MHz and a DC current gain of 115.
| Power dissipation | 150 mW |
|---|---|
| Junction temperature (max) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Transition frequency | 260 MHz |
| DC current gain (hFE) | 115 |
| Input resistance (typical) | 47 kΩ |
The devices can dissipate up to 150 mW.
They can be stored from –55 °C to +150 °C.
The transition frequency is specified as 260 MHz.