This document describes the features and characteristics of DTD543XE / DTD543XM digital transistors, including low VCE (sat) and built-in resistors. It also provides information on applications and dimensions.
The DTD543XE and DTD543XM are NPN epitaxial planar silicon transistors with built‑in thin‑film bias resistors, offering low saturation voltage and simplified inverter circuit design. They are intended for use in inverters, interfaces, and driver circuits.
The document lists absolute maximum ratings, dimensions, packaging details, and extensive electrical characteristics such as supply voltage, collector current, power dissipation, and transition frequency, together with characteristic curves and application notes.
| Supply voltage (Voc) | 12 V |
|---|---|
| Collector current (Ic) | 500 mA |
| Power dissipation (Pd) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 °C to +150 °C |
| Transition frequency (fT) | 260 MHz |
| Input resistance (Ri) | 3.29 kΩ |
| DC current gain (hFE) | 140 |
The device can handle up to 500 mA collector current.
The supply voltage (Voc) is rated at 12 V.
The storage temperature range is –55 °C to +150 °C.