This document describes the features and characteristics of DTD543ZE / DTD543ZM transistors, including low VCE (sat), built-in resistors, and easy device design. These transistors are suitable for applications such as inverters, interfaces, and drivers.
The DTD543ZE and DTD543ZM are NPN epitaxial planar silicon transistors with built‑in thin‑film bias resistors, designed for inverter, interface and driver circuits. Their low saturation voltage and integrated resistors simplify circuit design by eliminating external bias components.
Key features include a maximum collector current of 500 mA, a supply voltage of 12 V, and a transition frequency of 260 MHz. The datasheet lists absolute maximum ratings, packaging details, and extensive electrical characteristic curves to aid designers in selecting appropriate operating conditions.
| Supply voltage | 12 V |
|---|---|
| Maximum collector current | 500 mA |
| Junction temperature | 150 °C |
| Transition frequency (ft) | 260 MHz |
| Input resistance (typical) | 47 kΩ |
The maximum collector current is 500 mA.
They are specified for a supply voltage of 12 V.
The transition frequency (ft) is 260 MHz.