DTDG23YP is a NPN digital transistor with built-in diodes and resistors, high integration, high current gain, low turn-on voltage, short-circuit protection, etc.
The DTDG23YP is an NPN epitaxial planar silicon transistor that incorporates built‑in resistors and a zener diode for reverse‑surge protection. It is intended for use in inverters, interfaces, drivers and similar circuits.
The document lists absolute maximum ratings, detailed electrical characteristics, typical performance curves, and packaging dimensions. It also includes application notes and legal notices from ROHM.
| Minimum DC current gain (hFE) | 300 |
|---|
It includes a built‑in zener diode that protects against reverse surge.
The minimum DC current gain is 300.