This document specifies the features and characteristics of Spansion memory products, which are now offered by both Advanced Micro Devices and Fujitsu. The document provides information on the continuity of specifications and ordering part numbers.
The Am29LV640D/Am29LV641D is a 64‑Mbit (4 M × 16‑bit) CMOS flash memory device that operates from a single 3.0 V to 3.6 V supply. It offers fast access times, low power consumption, and a variety of package options, making it suitable for a wide range of embedded applications.
Key features include VersatileIO™ control, sector‑level protection, an embedded erase/program algorithm, and compliance with the Common Flash Interface (CFI). The device is offered in 48‑pin TSOP, 56‑pin SSOP, 63‑ball FBGA, and 64‑ball fortified BGA packages, with a guaranteed minimum of 1 million erase cycles per sector.
| Memory capacity | 64 Mbit (4 M × 16‑bit) |
|---|---|
| Operating voltage | 3.0 V to 3.6 V |
| Typical access time | 90 ns (fast) / 120 ns (standard) |
| Active read current | 9 mA (typical at 3.0 V, 5 MHz) |
| Erase/program current | 26 mA (typical) |
| Standby current | 200 nA (typical) |
| Number of sectors | 128 sectors of 32 Kword each |
| Package options | 48‑pin TSOP, 56‑pin SSOP, 63‑ball FBGA, 64‑ball fortified BGA |
| Erase‑cycle endurance | ≥ 1 million cycles per sector |
| CFI compliance | Common Flash Interface compliant |
The device operates from 3.0 V to 3.6 V for read, erase, and program operations.
It contains 128 sectors, each 32 Kword in size.
Typical active read current is 9 mA.
AMD guarantees a minimum of 1 million erase cycles per sector.