This document introduces the features and characteristics of AMD Am29LV102B 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory. The product adopts single power supply, the working voltage range is 2.7 to 3.6V, which can meet the battery powered application; the manufacturing process is 0.35 micron, the performance is high, the read and write speed is fast; the power consumption is low, the automatic sleep mode current is only 1 microampere, the standby mode current is 1 microampere, the read mode current is 7 milliampere, the program/erase mode current is 15 milliampere; it adopts flexible sector architecture, and any combination of sectors can be erased, and supports full chip erase; it supports sector locking to prevent any program or erase operation on that sector; it provides unlock bypass program command to reduce the programming time.
The Am29LV102B is a 2 Megabit (256 K × 8‑bit) CMOS flash memory device that operates from a single 3.0 V power supply. It is available in 32‑pin PLCC and 32‑pin TSOP packages and supports full‑voltage operation from 2.7 V to 3.6 V, with a regulated range of 3.0 V to 3.6 V for high‑performance microprocessors.
Key features include fast access times (as low as 55 ns), ultra‑low power consumption modes (automatic sleep 1 µA, standby 1 pA), flexible sector architecture (16 KB, 8 KB, 32 KB, 64 KB sectors), and a guaranteed minimum of 1 million write/erase cycles. The device is JEDEC‑compatible and includes built‑in erase‑suspend/resume and data‑polling capabilities.
| Memory size | 2 Megabit (256 K × 8‑bit) |
|---|---|
| Full voltage range | 2.7 V – 3.6 V |
| Regulated voltage range | 3.0 V – 3.6 V |
| Fastest access time | 55 ns |
| Maximum access time | 120 ns |
| Automatic sleep mode current | 1 µA |
| Standby mode current | 1 pA |
| Read mode current | 7 mA |
| Program/erase mode current | 15 mA |
| Package options | 32‑pin PLCC, 32‑pin TSOP |
| Endurance | ≥ 1 000 000 write/erase cycles |
| Temperature range (commercial) | 0 °C – +70 °C |
| Temperature range (industrial) | -40 °C – +85 °C |
| Temperature range (extended) | -55 °C – +125 °C |
The device guarantees a minimum of 1 million write/erase cycles.
The flash memory is offered in 32‑pin PLCC and 32‑pin TSOP packages.