This datasheet provides the IMX8Transistors's specification information, including external dimensions, package, pin definition, polarity, absolute maximum ratings, electrical characteristics, transition frequency, etc.
The ROHM IMX8 is a general‑purpose dual transistor offered in an SMT6 (SC‑74) package. The datasheet provides key features such as high breakdown voltage and two 2SC3906K chips in a single package.
Detailed electrical characteristics include absolute maximum ratings, typical performance curves, and application notes. The document also contains legal and export‑control information for users integrating the device into various electronic equipment.
| Collector‑Base Voltage (Vcbo) | 120 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 120 V |
| Emitter‑Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 50 mA |
| Power Dissipation (Po) | 300 mW total |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
| Transition Frequency (ft) | 140 MHz |
The maximum collector current is 50 mA.
The collector‑base breakdown voltage is rated at 120 V.
Yes, the device is listed in Annex 1 (Item 16) of Japan’s Export Trade Control Order and may be subject to export controls.