This document describes the features and dimensions of ROHM's EMX5 / UMX5N / IMX5 high transition frequency (dual transistors) products.
This datasheet provides the key specifications for ROHM's EMX5, UMX5N and IMX5 semiconductor devices. It highlights the high transition frequency, low output capacitance and the available EMT6, UMT6 and SMT6 package types.
The document lists absolute maximum ratings, electrical characteristics such as collector‑base voltage, collector current, power dissipation, junction temperature, storage temperature range, transition frequency and output capacitance, and includes typical application notes and safety considerations.
| Collector‑base voltage (Vcbo) | 20 V |
|---|---|
| Emitter‑base voltage (Vebo) | 3 V |
| Collector current (Ic) | 50 mA |
| Collector power dissipation (Po) | 150 mW (TOTAL) |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55 to +150 °C |
| Output capacitance (Cob) | 0.9 pF |
The collector‑base voltage rating is 20 V.
The devices are available in EMT6, UMT6 and SMT6 packages.
The recommended storage temperature range is –55 °C to +150 °C.