ROHM EMZ1 / UMZ1N / IMZ1A Transistor Datasheet

EMZ1 / UMZ1N / IMZ1A is a dual transistor produced by ROHM. It integrates two chips, 2SA1037AK and 2SC2412K, and is packaged in multiple types such as EMT, UMT, and SMT. It has the advantages of small size, low cost, and easy installation.


ROHM EMZ1 / UMZ1N / IMZ1A Transistor Datasheet - cover page
Brand
ROHM
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
96 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
94557005475E6318AA4D01374E4249E5

About this manual

The EMZ1, UMZ1N, and IMZ1A are general‑purpose dual transistors offered by ROHM. They are available in NPN and PNP epitaxial planar silicon structures and can be mounted in EMT, UMT, or SMT packages, allowing automatic mounting and reduced cost and area.

The document lists absolute maximum ratings, electrical characteristics such as breakdown voltages, current limits, and power dissipation, as well as packaging dimensions and example application circuits. It also includes a legal disclaimer and export‑control information.

What's inside

  • Features
  • Structure
  • Equivalent circuit
  • External dimensions
  • Absolute maximum ratings
  • Electrical characteristics
  • Packaging specifications
  • Electrical characteristic curves
  • Appendix

Specifications

Collector‑base voltage (Vceo)60 V
Collector‑emitter voltage (Vceo)50 V
Emitter‑base voltage (VeBo)7 V
Power dissipation per element120 mW
Maximum junction temperature (Tj)150 °C
Storage temperature range-55 °C to +150 °C

Frequently asked questions

What is the maximum collector‑emitter voltage for these transistors?

The maximum collector‑emitter voltage is 50 V.

What package types are available for the EMZ1, UMZ1N, and IMZ1A transistors?

They are offered in EMT, UMT, and SMT packages for automatic mounting.

What is the maximum power dissipation per element?

Each element may dissipate up to 120 mW.

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