This document describes the features and characteristics of EMH2 / UMH2N / IMH2A NPN 100mA 50V complex digital transistors (bias resistor built-in transistors). They have built-in bias resistors that allow the configuration of an inverter circuit without connecting external input resistors. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing and completely eliminate parasitic effects. Only the on/off conditions need to be set for operation, making the circuit design easy.
The ROHM EMH2, UMH2N, and IMH2A are NPN transistors featuring built‑in bias resistors (47 kΩ) that simplify inverter circuit design without external resistors. Each device contains two DTC144E chips in a single package and complies with lead‑free/RoHS standards.
The datasheet lists absolute maximum ratings, electrical characteristics, package dimensions, and typical application circuits such as inverters, interfaces, and drivers. Detailed graphs illustrate input‑voltage vs. output‑current behavior and DC current gain across temperature ranges.
| Supply voltage (Voc) | 50 V |
|---|---|
| Input voltage range (Vin) | -10 V to +40 V |
| Output current (lo) | 30 mA |
| Collector current max (Ic) | 100 mA |
| Power dissipation (EMH2/UMH2N) | 150 mW |
| Power dissipation (IMH2A) | 300 mW |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fT) | 250 MHz |
Yes, the devices are lead‑free and RoHS compliant.
The IMH2A can dissipate up to 300 mW total.
Each device includes built‑in bias resistors of 47 kΩ.